製造零件編號

Vishay SiSS5623DN Type P-Channel MOSFET, 36.3 A, 60 V Enhancement, 8-Pin 1212-8S SISS5623DN-T1-GE3

RS庫存編號:: 280-0000
製造零件編號:: SISS5623DN-T1-GE3
製造商:: Vishay

Vishay SiSS5623DN Type P-Channel MOSFET, 36.3 A, 60 V Enhancement, 8-Pin 1212-8S SISS5623DN-T1-GE3

此圖片僅供參考，請參閲產品詳細資訊及規格

小計（1 卷，共 3000 件）*

TWD76,800.00

(不含稅)

TWD80,640.00

庫存資訊目前無法存取 - 請稍後再回來查看

單位	每單位	每卷*
3000 +	TWD25.60	TWD76,800.00

* 參考價格

RS庫存編號:: 280-0000
製造零件編號:: SISS5623DN-T1-GE3
製造商:: Vishay

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	36.3A
	Maximum Drain Source Voltage Vds	60V
	Package Type	1212-8S
	Series	SiSS5623DN
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.046Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	56.8W
	Typical Gate Charge Qg @ Vgs	10.1nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 36.3A
	Maximum Drain Source Voltage Vds 60V
	Package Type 1212-8S
	Series SiSS5623DN
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.046Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 56.8W
	Typical Gate Charge Qg @ Vgs 10.1nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SISS5623DN-T1-GE3

The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.

New generation power MOSFET

100 percent Rg and UIS tested

Ultra low RDS x Qg FOM product

Fully lead (Pb)-free device

Vishay SiSS5623DN Type P-Channel MOSFET, 36.3 A, 60 V Enhancement, 8-Pin 1212-8S SISS5623DN-T1-GE3

相關連結