Vishay SIHK Type N-Channel MOSFET, 19 A, 600 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK155N60E-T1-GE3
- RS庫存編號:
- 279-9920
- 製造零件編號:
- SIHK155N60E-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 件）*
TWD191.00
(不含稅)
TWD200.55
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 2,000 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 1 - 49 | TWD191.00 |
| 50 - 99 | TWD186.00 |
| 100 - 249 | TWD183.00 |
| 250 - 999 | TWD180.00 |
| 1000 + | TWD176.00 |
* 參考價格
- RS庫存編號:
- 279-9920
- 製造零件編號:
- SIHK155N60E-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 19A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | PowerPAK 10 x 12 | |
| Series | SIHK | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.158Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 156W | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 9.9mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 19A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type PowerPAK 10 x 12 | ||
Series SIHK | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.158Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 156W | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Maximum Gate Source Voltage Vgs 30V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 9.9mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay SIHK Series MOSFET, 600V Drain Source Voltage, 19A Continuous Drain Current - SIHK155N60E-T1-GE3
This MOSFET is a high-voltage enhancement-mode N-channel switching transistor designed for surface-mount power conversion and control applications. It suits circuits requiring robust drain-to-source blocking at elevated voltages while operating across a wide temperature span.
Features and Benefits:
• 600V drain-source rating enables high-voltage designs • 19A continuous drain current supports substantial load currents • 0.158Ω Rds(on) reduces conduction losses during operation • 36nC typical gate charge for predictable switching performance • 156W power dissipation allows sustained heat handling • 150°C maximum operating temperature tolerates elevated thermal stress
Applications
• Suitable for offline SMPS primary switches in power supplies • Ideal for industrial motor drive switching stages • Used for high-voltage DC-DC converters in automation systems • Can be used for inverter output stage switching in electrical drives • Used for switch-mode loads in mechanical control equipment
What package should I account for when laying out the board?
The device is supplied in an 8-pin PowerPAK10x12 surface-mount package, requiring a footprint compatible with that thermal pad and lead arrangement.
What gate voltage range is safe for control circuitry?
The maximum permissible gate-to-source voltage is 30V, so driver circuits should retain gate excursions within that limit.
How does it behave thermally under load?
It can dissipate up to 156W
thermal management must ensure junction-to-ambient temperature stays within limits for reliable operation up to its 150°C rating.
Are there environmental or regulatory design considerations?
It is RoHS-compliant, allowing use in designs that restrict hazardous substances.
What switching characteristic affects driver selection?
The typical gate charge is 36nC at the rated gate voltage, which determines the required drive current and switching speed trade-offs.
相關連結
- Vishay SIHK Type N-Channel MOSFET 600 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK155N60E-T1-GE3
- Vishay SIHK Type N-Channel MOSFET 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK105N60E-T1-GE3
- Vishay SIHH Type N-Channel MOSFET 600 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH150N60E-T1-GE3
- Vishay E Type N-Channel MOSFET 600 V Enhancement, 4-Pin PowerPAK SIHH26N60E-T1-GE3
- Vishay SIHM080N60E Type N-Channel Single MOSFETs 600 V Enhancement, 4-Pin PowerPAK SIHM080N60E-T1-GE3
- Vishay E Type N-Channel Single MOSFETs 600 V Enhancement, 8-Pin PowerPAK SIHR120N60E-T1-GE3
- Vishay E Type N-Channel Single MOSFETs 600 V Enhancement, 8-Pin PowerPAK SIHR100N60E-T1-GE3
- Vishay E Type N-Channel MOSFET 600 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH240N60E-T1-GE3