製造零件編號

Vishay SI Type N-Channel MOSFET, 1.9 A, 100 V Enhancement, 6-Pin SOT-363 SI1480BDH-T1-GE3

RS庫存編號:: 279-9890
製造零件編號:: SI1480BDH-T1-GE3
製造商:: Vishay

Vishay SI Type N-Channel MOSFET, 1.9 A, 100 V Enhancement, 6-Pin SOT-363 SI1480BDH-T1-GE3

此圖片僅供參考，請參閲產品詳細資訊及規格

小計（1 卷，共 3000 件）*

TWD14,700.00

(不含稅)

TWD15,420.00

訂單超過 $1,300.00 免費送貨

有庫存

加上 6,000 件從 2026年1月26日起發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
3000 +	TWD4.90	TWD14,700.00

* 參考價格

RS庫存編號:: 279-9890
製造零件編號:: SI1480BDH-T1-GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	1.9A
	Maximum Drain Source Voltage Vds	100V
	Package Type	SOT-363
	Series	SI
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	0.212Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	6nC
	Maximum Power Dissipation Pd	1.7W
	Maximum Gate Source Voltage Vgs	±20 V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 1.9A
	Maximum Drain Source Voltage Vds 100V
	Package Type SOT-363
	Series SI
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 0.212Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 6nC
	Maximum Power Dissipation Pd 1.7W
	Maximum Gate Source Voltage Vgs ±20 V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SI1480BDH-T1-GE3

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

100 percent Rg and UIS tested

Fully lead (Pb)-free device

Vishay SI Type N-Channel MOSFET, 1.9 A, 100 V Enhancement, 6-Pin SOT-363 SI1480BDH-T1-GE3

訂單超過 $1,300.00 免費送貨

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