Vishay SI2324BDS N channel-Channel MOSFET, 1.9 A, 100 V Enhancement, 3-Pin SOT-23 SI2324BDS-T1-GE3
- RS庫存編號:
- 736-344
- 製造零件編號:
- SI2324BDS-T1-GE3
- 製造商:
- Vishay
N
可享批量折扣
小計(1 組,共 1 件)*
TWD10.00
(不含稅)
TWD10.50
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年6月14日 發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
膠帶 | 每膠帶 |
|---|---|
| 1 - 24 | TWD10.00 |
| 25 - 99 | TWD7.00 |
| 100 + | TWD3.00 |
* 參考價格
- RS庫存編號:
- 736-344
- 製造零件編號:
- SI2324BDS-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | N channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.9A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-23 (TO-236AB) | |
| Series | SI2324BDS | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.21Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 1.86nC | |
| Maximum Power Dissipation Pd | 1.7W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type N channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.9A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-23 (TO-236AB) | ||
Series SI2324BDS | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.21Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 1.86nC | ||
Maximum Power Dissipation Pd 1.7W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IL
The Vishay N-Channel MOSFET designed to optimise power management applications, featuring a robust 100V drain-source voltage rating and enhanced thermal characteristics for efficient operation.
The high thermal resistance performance enhances reliability
Designed for LED backlighting and DC/DC converter applications
相關連結
- Vishay SI Type N-Channel MOSFET 100 V Enhancement, 6-Pin SOT-363 SI1480BDH-T1-GE3
- Vishay TrenchFET N channel-Channel MOSFET 40 V Enhancement, 3-Pin SOT-23 SI2318HDS-T1-GE3
- Vishay TrenchFET N channel-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23 SI2302HDS-T1-GE3
- Vishay TrenchFET P-Channel MOSFET -20 V Enhancement, 3-Pin SOT-23 SI2301HDS-T1-GE3
- Vishay Si2301CDS Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23 SI2301CDS-T1-GE3
- Vishay SI Type N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-23 SI2392BDS-T1-GE3
- Vishay TP0610K Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 TP0610K-T1-GE3
- Vishay Si2333DDS Type P-Channel MOSFET 12 V Enhancement, 3-Pin SOT-23 SI2333DDS-T1-GE3
