Vishay Si2301CDS Type P-Channel MOSFET, 2.3 A, 20 V Enhancement, 3-Pin SOT-23 SI2301CDS-T1-GE3
- RS庫存編號:
- 710-3238
- 製造零件編號:
- SI2301CDS-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 20 件）*
TWD90.00
(不含稅)
TWD94.40
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 200 件準備從其他地點送貨
- 最終 2,640 件從 2026年4月23日 起發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 20 - 740 | TWD4.50 | TWD90.00 |
| 760 - 1480 | TWD4.40 | TWD88.00 |
| 1500 + | TWD4.40 | TWD88.00 |
* 參考價格
- RS庫存編號:
- 710-3238
- 製造零件編號:
- SI2301CDS-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.3A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | Si2301CDS | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 112mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 5.5nC | |
| Forward Voltage Vf | -1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 860mW | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3.04mm | |
| Height | 1.02mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.3A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series Si2301CDS | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 112mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 5.5nC | ||
Forward Voltage Vf -1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 860mW | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3.04mm | ||
Height 1.02mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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