製造零件編號

Vishay Si2305CDS Type P-Channel MOSFET, 4.4 A, 8 V Enhancement, 3-Pin SOT-23

RS庫存編號:: 919-0269
製造零件編號:: SI2305CDS-T1-GE3
製造商:: Vishay

Vishay Si2305CDS Type P-Channel MOSFET, 4.4 A, 8 V Enhancement, 3-Pin SOT-23

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 3000 件）*

TWD12,600.00

(不含稅)

TWD13,230.00

訂單超過 $1,300.00 免費送貨

最後的 RS 庫存

最終 48,000 個，準備發貨

單位	每單位	每卷*
3000 - 12000	TWD4.20	TWD12,600.00
15000 +	TWD4.10	TWD12,300.00

* 參考價格

RS庫存編號:: 919-0269
製造零件編號:: SI2305CDS-T1-GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	4.4A
	Maximum Drain Source Voltage Vds	8V
	Series	Si2305CDS
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	35mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	-1.2V
	Typical Gate Charge Qg @ Vgs	20nC
	Maximum Gate Source Voltage Vgs	8 V
	Maximum Power Dissipation Pd	960mW
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Width	1.4 mm
	Height	1.02mm
	Length	3.04mm
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 4.4A
	Maximum Drain Source Voltage Vds 8V
	Series Si2305CDS
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 35mΩ
	Channel Mode Enhancement
	Forward Voltage Vf -1.2V
	Typical Gate Charge Qg @ Vgs 20nC
	Maximum Gate Source Voltage Vgs 8 V
	Maximum Power Dissipation Pd 960mW
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Width 1.4 mm
	Height 1.02mm
	Length 3.04mm
	Standards/Approvals No
	Automotive Standard No

COO (Country of Origin):: CN

Vishay Si2305CDS Type P-Channel MOSFET, 4.4 A, 8 V Enhancement, 3-Pin SOT-23

訂單超過 $1,300.00 免費送貨

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