Infineon CoolMOSTMPFD7 MOSFET, 16 A, 650 V Enhancement, 3-Pin PG-TO-220 IPAN60R210PFD7SXKSA1

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小計(1 管,共 50 件)*

TWD1,855.00

(不含稅)

TWD1,948.00

(含稅)

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50 - 50TWD37.10TWD1,855.00
100 +TWD29.70TWD1,485.00

* 參考價格

RS庫存編號:
273-7460
製造零件編號:
IPAN60R210PFD7SXKSA1
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Maximum Continuous Drain Current Id

16A

Maximum Drain Source Voltage Vds

650V

Series

CoolMOSTMPFD7

Package Type

PG-TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

210mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-40°C

Typical Gate Charge Qg @ Vgs

23nC

Maximum Power Dissipation Pd

25W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon MOSFET offers Cool MOS revolutionary technology for high voltage power MOSFETs. It is designed according to the super junction principle and pioneered by Infineon Technologies. The latest Cool MOS PFD7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, motor drive, lighting, etc. The new series provides all the benefits of a fast switching Super junction MOSFET, combined with an excellent price to performance ratio and state of the art ease of use level. The technology meets highest efficiency standards and supports high power density, enabling customers going towards very slim designs.

Fast body diode

Extremely low losses

Low switching losses Eoss

Excellent thermal behaviour

Excellent commutation ruggedness

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