Infineon CoolSiC MOSFET 650 V G1 Type N-Channel MOSFET, 44 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R057M1HXUMA1
- RS庫存編號:
- 284-726
- 製造零件編號:
- IMT65R057M1HXUMA1
- 製造商:
- Infineon
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TWD434.00
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TWD455.70
(含稅)
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* 參考價格
- RS庫存編號:
- 284-726
- 製造零件編號:
- IMT65R057M1HXUMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 44A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PG-HSOF-8 | |
| Series | CoolSiC MOSFET 650 V G1 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Maximum Power Dissipation Pd | 203W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 44A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PG-HSOF-8 | ||
Series CoolSiC MOSFET 650 V G1 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Maximum Power Dissipation Pd 203W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon CoolSiC MOSFET 650 V G1 showcases Advanced silicon carbide technology, meticulously designed for high performance and reliability in demanding applications. Capitalising on over two decades of optimisation, this MOSFET delivers exceptional efficiency and ease of use, making it an Ideal choice for various implementations, including solar inverters and electric vehicle charging systems. Its robust features ensure reliable operation in high temperature environments, paving the way for more Compact and efficient power designs. Enhanced with a fast body diode and superior gate oxide reliability, this product stands out in its category, offering a unique balance of performance and user friendliness. Perfect for engineers striving for excellence within power supply circuits, this MOSFET embodies innovation and reliability, setting a new Benchmark in the industry.
Optimised for high current switching
Enhanced avalanche capability for robustness
Compatible with standard drivers for flexibility
Kelvin source configuration reduces switching losses
High performance and reliability combined
Ideal for continuous hard commutation
Compact design enhances power density
Qualified for industrial applications per JEDEC standards
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