Infineon CoolSiC MOSFET 650 V G1 Type N-Channel MOSFET, 196 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R022M1HXUMA1

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RS庫存編號:
284-713
製造零件編號:
IMT65R022M1HXUMA1
製造商:
Infineon
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品牌

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

196A

Maximum Drain Source Voltage Vds

650V

Package Type

PG-HSOF-8

Series

CoolSiC MOSFET 650 V G1

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

30mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

23 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

375W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS Compliant

Automotive Standard

No

The Infineon CoolSiC MOSFET 650 V G1 represents a significant advancement in power electronics, engineered with cutting edge silicon carbide technology to enhance performance and reliability. This innovative device boasts optimised switching characteristics, allowing for high efficiency in demanding applications. It excels in challenging environments, offering superior heat resistance and reliability beyond traditional silicon devices. Its versatility enables seamless integration into various systems, including telecommunications, renewable energy, and electric vehicle charging. Designed for exceptional thermal management, it ensures long term performance while reducing overall system footprint. The CoolSiC MOSFET stands as an Ideal solution for modern power conversion, supporting efforts towards energy efficient and Compact designs.

Optimised switching for system efficiency

Compatible with standard driver configurations

Effective in high temperature environments

Reduced switching losses with Kelvin source

Reliable fast body diode design

Supports hard commutation topologies

Improves efficiency and reduces costs

Qualified per JEDEC standards

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