Infineon CoolSiC MOSFET 650 V G1 Type N-Channel MOSFET, 61 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R039M1HXUMA1
- RS庫存編號:
- 284-718
- 製造零件編號:
- IMT65R039M1HXUMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
小計（1 卷，共 2000 件）*
TWD756,000.00
(不含稅)
TWD793,800.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年4月06日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 2000 + | TWD378.00 | TWD756,000.00 |
* 參考價格
- RS庫存編號:
- 284-718
- 製造零件編號:
- IMT65R039M1HXUMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 61A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolSiC MOSFET 650 V G1 | |
| Package Type | PG-HSOF-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 51mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Maximum Power Dissipation Pd | 263W | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 61A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolSiC MOSFET 650 V G1 | ||
Package Type PG-HSOF-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 51mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Maximum Power Dissipation Pd 263W | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon CoolSiC MOSFET 650 V G1 is a pioneering power device that delivers exceptional performance by harnessing the Advanced properties of silicon carbide technology. Designed for high efficiency and reliability, this MOSFET excels in applications demanding outstanding thermal stability and elevated performance under harsh conditions. With an innovative gate oxide structure and superior switching behaviour, it significantly reduces losses at higher currents, ensuring longevity and safety in various electrical environments. Perfectly suited for applications including power supply systems, EV charging infrastructure, and renewable energy solutions, the CoolSiC MOSFET stands as a versatile solution that meets the demanding requirements of modern power electronics. This device is a testament to over 20 years of engineering excellence, serving as a robust foundation for next generation energy solutions.
Optimised switching enhances performance
Robust body diode ensures reliable commutation
Excellent thermal management extends lifetimes
Efficient operation at elevated temperatures
Seamless integration with standard drivers
Kelvin source reduces switching losses
Complies with JEDEC standards for reliability
Versatile for enhanced power density in designs
相關連結
- Infineon CoolSiC MOSFET 650 V G1 Type N-Channel MOSFET 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R039M1HXUMA1
- Infineon CoolSiC MOSFET 650 V G1 Type N-Channel MOSFET 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R030M1HXUMA1
- Infineon CoolSiC MOSFET 650 V G1 Type N-Channel MOSFET 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R057M1HXUMA1
- Infineon CoolSiC MOSFET 650 V G1 Type N-Channel MOSFET 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R048M1HXUMA1
- Infineon CoolSiC MOSFET 650 V G1 Type N-Channel MOSFET 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R083M1HXUMA1
- Infineon CoolSiC MOSFET 650 V G1 Type N-Channel MOSFET 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R022M1HXUMA1
- Infineon CoolSiC Type N-Channel MOSFET 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R107M1HXUMA1
- Infineon IGT65 Type N-Channel MOSFET 650 V Enhancement, 8-Pin PG-HSOF-8 IGT65R045D2ATMA1