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Infineon IPN N-Channel MOSFET, 3.6 A, 650 V Enhancement, 3-Pin PG-SOT223

Name: Infineon IPN N-Channel MOSFET, 3.6 A, 650 V Enhancement, 3-Pin PG-SOT223
Brand: Infineon
SKU: 273-3016
Availability: InStock

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小計（10 件, 每袋10個）*

TWD253.00

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TWD265.60

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產品詳細資訊

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選取全部	屬性	值
	品牌	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	3.6A
	Maximum Drain Source Voltage Vds	650V
	Package Type	PG-SOT223
	Series	IPN
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.5Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	6W
	Typical Gate Charge Qg @ Vgs	4.6nC
	Minimum Operating Temperature	-40°C
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	1V
	Maximum Operating Temperature	150°C
	Standards/Approvals	JEDEC Standard
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 3.6A
	Maximum Drain Source Voltage Vds 650V
	Package Type PG-SOT223
	Series IPN
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.5Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 6W
	Typical Gate Charge Qg @ Vgs 4.6nC
	Minimum Operating Temperature -40°C
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 1V
	Maximum Operating Temperature 150°C
	Standards/Approvals JEDEC Standard
	Automotive Standard No

The Infineon 600V cool MOS PFD7 super junction MOSFET complements the cool MOS 7 offering for consumer applications.

BOM cost reduction and easy manufacturing

Robustness and reliability

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