製造零件編號

Infineon IPN Type N-Channel MOSFET, 3.6 A, 650 V Enhancement, 3-Pin PG-SOT223 IPN60R1K5PFD7SATMA1

RS庫存編號:: 273-3015
製造零件編號:: IPN60R1K5PFD7SATMA1
製造商:: Infineon

Infineon IPN Type N-Channel MOSFET, 3.6 A, 650 V Enhancement, 3-Pin PG-SOT223 IPN60R1K5PFD7SATMA1

此圖片僅供參考，請參閲產品詳細資訊及規格

小計（1 卷，共 3000 件）*

TWD22,500.00

(不含稅)

TWD23,640.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年4月15日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
3000 +	TWD7.50	TWD22,500.00

* 參考價格

RS庫存編號:: 273-3015
製造零件編號:: IPN60R1K5PFD7SATMA1
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	3.6A
	Maximum Drain Source Voltage Vds	650V
	Package Type	PG-SOT223
	Series	IPN
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.5Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-40°C
	Forward Voltage Vf	1V
	Maximum Power Dissipation Pd	6W
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	4.6nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	JEDEC Standard
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 3.6A
	Maximum Drain Source Voltage Vds 650V
	Package Type PG-SOT223
	Series IPN
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.5Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -40°C
	Forward Voltage Vf 1V
	Maximum Power Dissipation Pd 6W
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 4.6nC
	Maximum Operating Temperature 150°C
	Standards/Approvals JEDEC Standard
	Automotive Standard No

Datasheet - IPN60R1K5PFD7SATMA1

The Infineon 600V cool MOS PFD7 super junction MOSFET complements the cool MOS 7 offering for consumer applications.

BOM cost reduction and easy manufacturing

Robustness and reliability

Infineon IPN Type N-Channel MOSFET, 3.6 A, 650 V Enhancement, 3-Pin PG-SOT223 IPN60R1K5PFD7SATMA1

訂單超過 $1,300.00 免費送貨

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