Infineon ISP Type P-Channel P-Channel, 1.9 A, 60 V Enhancement, 3-Pin PG-SOT223
- RS庫存編號:
- 273-3042
- 製造零件編號:
- ISP26DP06NMSATMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 25 件）*
TWD292.50
(不含稅)
TWD307.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 2,925 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 25 | TWD11.70 | TWD292.50 |
| 50 - 75 | TWD10.80 | TWD270.00 |
| 100 - 225 | TWD10.00 | TWD250.00 |
| 250 - 975 | TWD9.90 | TWD247.50 |
| 1000 + | TWD9.70 | TWD242.50 |
* 參考價格
- RS庫存編號:
- 273-3042
- 製造零件編號:
- ISP26DP06NMSATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | P-Channel | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 1.9A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | ISP | |
| Package Type | PG-SOT223 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 260mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 5W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 10.8nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, IEC61249-2-21 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type P-Channel | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 1.9A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series ISP | ||
Package Type PG-SOT223 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 260mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 5W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 10.8nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, IEC61249-2-21 | ||
Automotive Standard No | ||
The Infineon P-channel MOSFET in normal and logic level, reducing design complexity in medium and low power applications.
Easy interface to MCU
Fast switching
Avalanche ruggedness
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