Infineon ISP Type P-Channel MOSFET, 1.9 A, 60 V Enhancement, 3-Pin SOT-223 ISP25DP06LMXTSA1
- RS庫存編號:
- 243-9273
- 製造零件編號:
- ISP25DP06LMXTSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD86.00
(不含稅)
TWD90.30
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 805 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 5 | TWD17.20 | TWD86.00 |
| 10 - 95 | TWD16.80 | TWD84.00 |
| 100 - 245 | TWD16.60 | TWD83.00 |
| 250 - 495 | TWD15.80 | TWD79.00 |
| 500 + | TWD15.40 | TWD77.00 |
* 參考價格
- RS庫存編號:
- 243-9273
- 製造零件編號:
- ISP25DP06LMXTSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 1.9A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-223 | |
| Series | ISP | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.7mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 1.9A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-223 | ||
Series ISP | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.7mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon P-Channel small signal transistor have Pb-free lead plating. The drain current and drain-source voltage of MOSFET is -1.9 A and -60V respectively. It has very low resistance value. The operating temperature is ranges from -55 °C to 150 °C.
Surface Mount technology
Logic level availability
Easy interface to Microcontroller Unit (MCU)
Fast switching
avalanche ruggedness
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