Infineon AIK 1 Type N-Channel MOSFET, 650 V Enhancement, 7-Pin PG-TO263-7 AIKBE50N65RF5ATMA1
- RS庫存編號:
- 349-189
- 製造零件編號:
- AIKBE50N65RF5ATMA1
- 製造商:
- Infineon
可享批量折扣
小計（1 件）*
TWD361.00
(不含稅)
TWD379.05
(含稅)
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單位 | 每單位 |
|---|---|
| 1 - 9 | TWD361.00 |
| 10 - 99 | TWD325.00 |
| 100 - 499 | TWD300.00 |
| 500 - 999 | TWD278.00 |
| 1000 + | TWD249.00 |
* 參考價格
- RS庫存編號:
- 349-189
- 製造零件編號:
- AIKBE50N65RF5ATMA1
- 製造商:
- Infineon
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PG-TO263-7 | |
| Series | AIK | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 108nC | |
| Forward Voltage Vf | 1.8V | |
| Maximum Power Dissipation Pd | 326W | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PG-TO263-7 | ||
Series AIK | ||
Mount Type Surface | ||
Pin Count 7 | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 108nC | ||
Forward Voltage Vf 1.8V | ||
Maximum Power Dissipation Pd 326W | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon CoolSiC Hybrid Discrete with TRENCHSTOP 5 Fast Switching IGBT and CoolSiC schottky diode G5 is designed for automotive. It has best in class efficiency in hard switching and resonant topologies.
650 V breakdown voltage
CoolSiCTM Schottky diode G5
Low gate charge QG
Kelvin emitter connection for optimized switching performance
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