Infineon IMBG65 Type N-Channel MOSFET, 170 A, 650 V Enhancement, 7-Pin PG-TO263-7 IMBG65R009M1HXTMA1
- RS庫存編號:
- 351-987
- 製造零件編號:
- IMBG65R009M1HXTMA1
- 製造商:
- Infineon
可享批量折扣
小計（1 件）*
TWD1,615.00
(不含稅)
TWD1,695.75
(含稅)
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單位 | 每單位 |
|---|---|
| 1 - 9 | TWD1,615.00 |
| 10 - 99 | TWD1,453.00 |
| 100 + | TWD1,340.00 |
* 參考價格
- RS庫存編號:
- 351-987
- 製造零件編號:
- IMBG65R009M1HXTMA1
- 製造商:
- Infineon
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 170A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Output Power | 555W | |
| Package Type | PG-TO263-7 | |
| Series | IMBG65 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.5mm | |
| Length | 10.2mm | |
| Standards/Approvals | JEDEC | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 170A | ||
Maximum Drain Source Voltage Vds 650V | ||
Output Power 555W | ||
Package Type PG-TO263-7 | ||
Series IMBG65 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 4.5mm | ||
Length 10.2mm | ||
Standards/Approvals JEDEC | ||
Automotive Standard No | ||
The Infineon CoolSiC is built over the solid silicon carbide technology. Leveraging the wide bandgap SiC material characteristics, it offers a unique combination of performance, reliability and ease of use. Suitable for high temperature and harsh operations, it enables the simplified and cost effective deployment of the highest system efficiency.
Optimized switching behaviour at higher currents
Commutation robust fast body diode with low Qfr
Superior gate oxide reliability
Increased avalanche capability
Compatible with standard drivers
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