Infineon CoolSiC Type N-Channel MOSFET, 41 A, 650 V Enhancement, 7-Pin PG-TO263-7 IMBG65R050M2HXTMA1

RS庫存編號:: 349-328
製造零件編號:: IMBG65R050M2HXTMA1
製造商:: Infineon

Infineon CoolSiC Type N-Channel MOSFET, 41 A, 650 V Enhancement, 7-Pin PG-TO263-7 IMBG65R050M2HXTMA1

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小計（1 件）*

TWD312.00

(不含稅)

TWD327.60

訂單超過 $1,300.00 免費送貨

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RS庫存編號:: 349-328
製造零件編號:: IMBG65R050M2HXTMA1
製造商:: Infineon

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產品詳細資訊

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選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	41A
	Maximum Drain Source Voltage Vds	650V
	Series	CoolSiC
	Package Type	PG-TO263-7
	Mount Type	Surface
	Pin Count	7
	Maximum Drain Source Resistance Rds	62mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	172W
	Typical Gate Charge Qg @ Vgs	22nC
	Maximum Gate Source Voltage Vgs	23 V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 41A
	Maximum Drain Source Voltage Vds 650V
	Series CoolSiC
	Package Type PG-TO263-7
	Mount Type Surface
	Pin Count 7
	Maximum Drain Source Resistance Rds 62mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 172W
	Typical Gate Charge Qg @ Vgs 22nC
	Maximum Gate Source Voltage Vgs 23 V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IMBG65R050M2HXTMA1

COO (Country of Origin):: MY

The Infineon 650 V CoolSiC MOSFET G2 is built on Infineon’s robust 2nd generation Silicon Carbide trench technology, offering unparalleled performance, superior reliability, and exceptional ease of use. This MOSFET enables cost effective, highly efficient, and simplified designs, meeting the ever-growing needs of modern power systems and markets. It is ideal for applications where high efficiency and robust performance are required, providing a reliable solution for a wide range of power electronics.

Ultra low switching losses

Robust against parasitic turn on even with 0 V turn off gate voltage

Flexible driving voltage and compatible with bipolar driving scheme

Robust body diode operation under hard commutation events

The .XT interconnection technology for best in class thermal performance

Infineon CoolSiC Type N-Channel MOSFET, 41 A, 650 V Enhancement, 7-Pin PG-TO263-7 IMBG65R050M2HXTMA1

訂單超過 $1,300.00 免費送貨

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