製造零件編號

Infineon HEXFET Type N-Channel MOSFET, 8 A, 60 V Enhancement, 8-Pin SO-8 IRF7351TRPBF

RS庫存編號:: 273-2805
製造零件編號:: IRF7351TRPBF
製造商:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 8 A, 60 V Enhancement, 8-Pin SO-8 IRF7351TRPBF

此圖片僅供參考，請參閲產品詳細資訊及規格

小計（1 卷，共 4000 件）*

TWD80,400.00

(不含稅)

TWD84,400.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年5月27日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
4000 +	TWD20.10	TWD80,400.00

* 參考價格

RS庫存編號:: 273-2805
製造零件編號:: IRF7351TRPBF
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	8A
	Maximum Drain Source Voltage Vds	60V
	Series	HEXFET
	Package Type	SO-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	17.8mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	2W
	Typical Gate Charge Qg @ Vgs	36nC
	Forward Voltage Vf	1.3V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 8A
	Maximum Drain Source Voltage Vds 60V
	Series HEXFET
	Package Type SO-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 17.8mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 2W
	Typical Gate Charge Qg @ Vgs 36nC
	Forward Voltage Vf 1.3V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS

Datasheet - IRF7351TRPBF

COO (Country of Origin):: PH

The Infineon MOSFET is a 60V N Channel HEXFET Power MOSFET. This MOSFET is used for low power motor drive systems and for isolated DC to DC converters.

Ultra low gate impedance

20V VGS maximum gate rating

Fully characterized avalanche voltage and current

Infineon HEXFET Type N-Channel MOSFET, 8 A, 60 V Enhancement, 8-Pin SO-8 IRF7351TRPBF

訂單超過 $1,300.00 免費送貨

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