Infineon HEXFET Type N-Channel MOSFET, 3.6 A, 150 V Enhancement, 8-Pin SO-8 IRF7451TRPBF
- RS庫存編號:
- 262-6734
- 製造零件編號:
- IRF7451TRPBF
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 10 件）*
TWD254.00
(不含稅)
TWD266.70
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 3,750 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 40 | TWD25.40 | TWD254.00 |
| 50 - 90 | TWD22.60 | TWD226.00 |
| 100 - 490 | TWD20.30 | TWD203.00 |
| 500 - 1990 | TWD18.40 | TWD184.00 |
| 2000 + | TWD18.10 | TWD181.00 |
* 參考價格
- RS庫存編號:
- 262-6734
- 製造零件編號:
- IRF7451TRPBF
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 3.6A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | SO-8 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 90mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.75mm | |
| Standards/Approvals | RoHS | |
| Width | 4 mm | |
| Length | 5mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 3.6A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type SO-8 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 90mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 2.5W | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Maximum Operating Temperature 150°C | ||
Height 1.75mm | ||
Standards/Approvals RoHS | ||
Width 4 mm | ||
Length 5mm | ||
Automotive Standard No | ||
The Infineon power MOSFET has low gate to drain charge to reduce switching losses. It is suitable for use with high frequency DC-DC converters.
Fully characterized avalanche voltage and current
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