製造零件編號

Infineon HEXFET Type N-Channel MOSFET, 6.9 A, 100 V Enhancement, 8-Pin SO-8

RS庫存編號:: 262-6737
製造零件編號:: IRF7473TRPBF
製造商:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 6.9 A, 100 V Enhancement, 8-Pin SO-8

此圖片僅供參考，請參閲產品詳細資訊及規格

小計（1 卷，共 4000 件）*

TWD96,800.00

(不含稅)

TWD101,640.00

庫存資訊目前無法存取 - 請稍後再回來查看

單位	每單位	每卷*
4000 +	TWD24.20	TWD96,800.00

* 參考價格

RS庫存編號:: 262-6737
製造零件編號:: IRF7473TRPBF
製造商:: Infineon

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	6.9A
	Maximum Drain Source Voltage Vds	100V
	Series	HEXFET
	Package Type	SO-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	26mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	61nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.3V
	Maximum Power Dissipation Pd	2.5W
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Length	5mm
	Height	1.75mm
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 6.9A
	Maximum Drain Source Voltage Vds 100V
	Series HEXFET
	Package Type SO-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 26mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 61nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.3V
	Maximum Power Dissipation Pd 2.5W
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Length 5mm
	Height 1.75mm
	Automotive Standard No

Datasheet - IRF7473TRPBF

The Infineon power MOSFET has benefits such as low gate drive current due to improved gate charge characteristic, improved avalanche ruggedness and dynamic dv/dt and fully characterized avalanche voltage and current.

Ultra low on-resistance

High speed switching

Infineon HEXFET Type N-Channel MOSFET, 6.9 A, 100 V Enhancement, 8-Pin SO-8

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