製造零件編號

Infineon HEXFET Type N-Channel MOSFET, 3.6 A, 150 V Enhancement, 8-Pin SO-8

RS庫存編號:: 262-6732
製造零件編號:: IRF7451TRPBF
製造商:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 3.6 A, 150 V Enhancement, 8-Pin SO-8

此圖片僅供參考，請參閲產品詳細資訊及規格

小計（1 卷，共 4000 件）*

TWD63,200.00

(不含稅)

TWD66,360.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年3月24日發貨

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單位	每單位	每卷*
4000 +	TWD15.80	TWD63,200.00

* 參考價格

RS庫存編號:: 262-6732
製造零件編號:: IRF7451TRPBF
製造商:: Infineon

規格

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	3.6A
	Maximum Drain Source Voltage Vds	150V
	Series	HEXFET
	Package Type	SO-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	90mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	30 V
	Forward Voltage Vf	1.3V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	28nC
	Maximum Power Dissipation Pd	2.5W
	Maximum Operating Temperature	150°C
	Width	4 mm
	Standards/Approvals	RoHS
	Length	5mm
	Height	1.75mm
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 3.6A
	Maximum Drain Source Voltage Vds 150V
	Series HEXFET
	Package Type SO-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 90mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 30 V
	Forward Voltage Vf 1.3V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 28nC
	Maximum Power Dissipation Pd 2.5W
	Maximum Operating Temperature 150°C
	Width 4 mm
	Standards/Approvals RoHS
	Length 5mm
	Height 1.75mm
	Automotive Standard No

Datasheet - IRF7451TRPBF

The Infineon power MOSFET has low gate to drain charge to reduce switching losses. It is suitable for use with high frequency DC-DC converters.

Fully characterized avalanche voltage and current

Infineon HEXFET Type N-Channel MOSFET, 3.6 A, 150 V Enhancement, 8-Pin SO-8

訂單超過 $1,300.00 免費送貨

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