製造零件編號

Infineon HEXFET Type P-Channel MOSFET, -3.6 A, -30 V Enhancement, 8-Pin SOIC

RS庫存編號:: 262-6741
製造零件編號:: IRF7606TRPBF
製造商:: Infineon

Infineon HEXFET Type P-Channel MOSFET, -3.6 A, -30 V Enhancement, 8-Pin SOIC

此圖片僅供參考，請參閲產品詳細資訊及規格

小計（1 卷，共 4000 件）*

TWD34,400.00

(不含稅)

TWD36,120.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年3月23日發貨

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單位	每單位	每卷*
4000 +	TWD8.60	TWD34,400.00

* 參考價格

RS庫存編號:: 262-6741
製造零件編號:: IRF7606TRPBF
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	-3.6A
	Maximum Drain Source Voltage Vds	-30V
	Package Type	SOIC
	Series	HEXFET
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	150mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	20nC
	Forward Voltage Vf	-1.2V
	Maximum Power Dissipation Pd	1.8W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id -3.6A
	Maximum Drain Source Voltage Vds -30V
	Package Type SOIC
	Series HEXFET
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 150mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 20nC
	Forward Voltage Vf -1.2V
	Maximum Power Dissipation Pd 1.8W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IRF7606TRPBF

The Infineon power MOSFET has low gate to drain charge to reduce switching losses. It is suitable for use with high frequency DC-DC converters.

Fully characterized avalanche voltage and current

Infineon HEXFET Type P-Channel MOSFET, -3.6 A, -30 V Enhancement, 8-Pin SOIC

訂單超過 $1,300.00 免費送貨

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