Infineon Isolated HEXFET 2 Type N-Channel MOSFET, 3.6 A, 80 V Enhancement, 8-Pin SOIC IRF7380TRPBF
- RS庫存編號:
- 826-8904
- 製造零件編號:
- IRF7380TRPBF
- 製造商:
- Infineon
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 包,共 20 件)*
TWD406.00
(不含稅)
TWD426.40
(含稅)
訂單超過 $1,300.00 免費送貨
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- 2,460 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 20 - 980 | TWD20.30 | TWD406.00 |
| 1000 - 1980 | TWD19.90 | TWD398.00 |
| 2000 + | TWD18.50 | TWD370.00 |
* 參考價格
- RS庫存編號:
- 826-8904
- 製造零件編號:
- IRF7380TRPBF
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.6A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | SOIC | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 73mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2W | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Height | 1.5mm | |
| Width | 4 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.6A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type SOIC | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 73mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2W | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Standards/Approvals No | ||
Length 5mm | ||
Height 1.5mm | ||
Width 4 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 3.6A Maximum Continuous Drain Current, 2W Maximum Power Dissipation - IRF7380TRPBF
This MOSFET is designed for efficient power management in various electronic applications. With a high voltage rating and a continuous drain current of 3.6A, it is suitable for high frequency DC-DC converters, ensuring reliable performance. Its Advanced design offers a practical solution for professionals in automation, electronics, and mechanical sectors seeking a versatile component for their circuits.
Features & Benefits
• Industry-standard SO-8 package ensures compatibility across different vendors
• Low Rds(on) of 73mΩ optimises efficiency in power applications
• Enhancement mode operation enhances performance characteristics
• Low gate charge of 15nC facilitates quicker switching speeds
• Maximum drain-source voltage of 80V accommodates high power needs
• RoHS compliant and halogen-free promotes environmental safety
Applications
• Used in high frequency DC-DC converters for power regulation
• Effective in battery management systems that require low power loss
• Suitable for motor controllers needing efficient switching performance
• Employed in power supply units to improve overall efficiency
• Appropriate for driving inductive loads like relays and solenoids
What are the implications of the maximum continuous drain current?
The maximum continuous drain current of 3.6A indicates its capability to manage higher currents in applications such as power supply circuits, ensuring stable operation without overheating.
How does the low Rds(on) affect performance?
The low Rds(on) of 73mΩ reduces power losses during operation, enhancing overall system efficiency, particularly beneficial in high frequency switching applications.
What is the significance of its temperature ratings?
Operating between -55°C and +150°C ensures the component can withstand harsh environmental conditions, making it suitable for industrial applications.
Can this component be directly mounted on PCBs?
Yes, its surface mount design allows for easy integration into PCB layouts, promoting efficient manufacturing processes and ensuring space-saving benefits in Compact designs.
How does the gate threshold voltage influence its operation?
With a gate threshold voltage ranging from 2V to 4V, it provides design flexibility, allowing compatibility with various control signals while ensuring effective device activation.
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