Infineon Isolated HEXFET 2 Type P-Channel MOSFET, 2.3 A, 20 V Enhancement, 8-Pin SOIC

RS庫存編號:: 166-1112
製造零件編號:: IRF7104PBF
製造商:: Infineon

Infineon Isolated HEXFET 2 Type P-Channel MOSFET, 2.3 A, 20 V Enhancement, 8-Pin SOIC

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 管，共 95 件）*

TWD1,900.00

(不含稅)

TWD1,995.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

380 件從 2026年1月05日起裝運發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每管*
95 - 380	TWD20.00	TWD1,900.00
475 +	TWD17.10	TWD1,624.50

* 參考價格

RS庫存編號:: 166-1112
製造零件編號:: IRF7104PBF
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	2.3A
	Maximum Drain Source Voltage Vds	20V
	Package Type	SOIC
	Series	HEXFET
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	400mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	9.3nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	2W
	Maximum Gate Source Voltage Vgs	12 V
	Forward Voltage Vf	-1.2V
	Maximum Operating Temperature	150°C
	Transistor Configuration	Isolated
	Height	1.5mm
	Width	4 mm
	Standards/Approvals	No
	Length	5mm
	Number of Elements per Chip	2
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 2.3A
	Maximum Drain Source Voltage Vds 20V
	Package Type SOIC
	Series HEXFET
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 400mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 9.3nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 2W
	Maximum Gate Source Voltage Vgs 12 V
	Forward Voltage Vf -1.2V
	Maximum Operating Temperature 150°C
	Transistor Configuration Isolated
	Height 1.5mm
	Width 4 mm
	Standards/Approvals No
	Length 5mm
	Number of Elements per Chip 2
	Automotive Standard No

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Infineon Isolated HEXFET 2 Type P-Channel MOSFET, 2.3 A, 20 V Enhancement, 8-Pin SOIC

訂單超過 $1,300.00 免費送貨

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