Infineon Isolated HEXFET 2 Type N, Type P-Channel MOSFET, 4 A, 30 V Enhancement, 8-Pin SOIC

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RS庫存編號:
168-7929
製造零件編號:
IRF7309TRPBF
製造商:
Infineon
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品牌

Infineon

Channel Type

Type N, Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

4A

Maximum Drain Source Voltage Vds

30V

Package Type

SOIC

Series

HEXFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

80mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

1.4W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

16.7nC

Forward Voltage Vf

1V

Maximum Operating Temperature

150°C

Transistor Configuration

Isolated

Length

5mm

Height

1.5mm

Width

4 mm

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

COO (Country of Origin):
PH

Dual N/P-Channel Power MOSFET, Infineon


Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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