Infineon Isolated HEXFET 2 Type P, Type N-Channel MOSFET, 3.5 A, 25 V Enhancement, 8-Pin SOIC
- RS庫存編號:
- 165-5912
- 製造零件編號:
- IRF7105TRPBF
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 4000 件）*
TWD38,000.00
(不含稅)
TWD39,920.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 4,000 件從 2026年1月05日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 4000 - 4000 | TWD9.50 | TWD38,000.00 |
| 8000 + | TWD9.20 | TWD36,800.00 |
* 參考價格
- RS庫存編號:
- 165-5912
- 製造零件編號:
- IRF7105TRPBF
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P, Type N | |
| Maximum Continuous Drain Current Id | 3.5A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Series | HEXFET | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 400mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Standards/Approvals | No | |
| Width | 4 mm | |
| Height | 1.5mm | |
| Length | 5mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type P, Type N | ||
Maximum Continuous Drain Current Id 3.5A | ||
Maximum Drain Source Voltage Vds 25V | ||
Series HEXFET | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 400mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Standards/Approvals No | ||
Width 4 mm | ||
Height 1.5mm | ||
Length 5mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Dual N/P-Channel Power MOSFET, Infineon
Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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