Infineon Isolated HEXFET 2 Type P, Type N-Channel MOSFET, 3.5 A, 30 V Enhancement, 8-Pin SOIC

RS庫存編號:: 145-9491
製造零件編號:: IRF9952TRPBF
製造商:: Infineon

Infineon Isolated HEXFET 2 Type P, Type N-Channel MOSFET, 3.5 A, 30 V Enhancement, 8-Pin SOIC

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可享批量折扣

小計（1 卷，共 4000 件）*

TWD35,600.00

(不含稅)

TWD37,360.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年4月20日發貨

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單位	每單位	每卷*
4000 - 16000	TWD8.90	TWD35,600.00
20000 +	TWD8.50	TWD34,000.00

* 參考價格

RS庫存編號:: 145-9491
製造零件編號:: IRF9952TRPBF
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type P, Type N
	Maximum Continuous Drain Current Id	3.5A
	Maximum Drain Source Voltage Vds	30V
	Package Type	SOIC
	Series	HEXFET
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	400mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	6.1nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	2W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	0.82V
	Maximum Operating Temperature	150°C
	Transistor Configuration	Isolated
	Height	1.5mm
	Standards/Approvals	No
	Width	4 mm
	Length	5mm
	Number of Elements per Chip	2
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type P, Type N
	Maximum Continuous Drain Current Id 3.5A
	Maximum Drain Source Voltage Vds 30V
	Package Type SOIC
	Series HEXFET
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 400mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 6.1nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 2W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 0.82V
	Maximum Operating Temperature 150°C
	Transistor Configuration Isolated
	Height 1.5mm
	Standards/Approvals No
	Width 4 mm
	Length 5mm
	Number of Elements per Chip 2
	Automotive Standard No

Infineon HEXFET Series MOSFET, 2.3A/3.5A Maximum Continuous Drain Current, 2W Maximum Power Dissipation - IRF9952TRPBF

This versatile MOSFET delivers high performance in a Compact package, integrating both N-channel and P-channel configurations. It is designed for effective operation in various electronic applications, ensuring efficiency and dependability. With a maximum drain current of 3.5A and a maximum drain-source voltage of 30V, it is suitable for applications that require robust switching capabilities.

Features & Benefits

• Dual-channel configuration enhances design flexibility

• Surface mount design simplifies PCB assembly

• Low resistance (150mΩ and 400mΩ) reduces power loss

• High temperature operation (+150°C) ensures reliability in extreme conditions

• Improved gate charge characteristics enhance switching efficiency

• Isolated transistor configuration minimises cross-talk for cleaner signals

Applications

• Power management solutions

• Electric vehicle systems for improved efficiency

• Industrial automation and control

• Renewable energy systems for optimal performance

• Consumer electronics for enhanced device performance

How does the isolation of this device benefit my application?

The isolated configuration minimises interference among circuits, ensuring clean signals and preventing unwanted interactions between components.

What temperature range can this device handle during operation?

It can operate within a temperature range of -55°C to +150°C, making it suitable for extreme conditions.

Can I use this product in my surface mount PCB design?

Yes, its surface mount design allows for easy integration into PCB layouts, optimising space and enhancing thermal performance.

What factors should I consider when using this for switching applications?

Ensure the maximum gate-source voltage of ±20V is not exceeded and verify that the gate charge aligns with your switching frequency for optimal performance.

How do the specifications affect my power efficiency?

With low on-resistance and high continuous drain current, this MOSFET contributes to minimal power loss, enhancing overall energy efficiency in your circuit designs.