Infineon Isolated HEXFET 2 Type N-Channel MOSFET, 3 A, 50 V Enhancement, 8-Pin SOIC

RS庫存編號:: 168-8757
製造零件編號:: IRF7103TRPBF
製造商:: Infineon

Infineon Isolated HEXFET 2 Type N-Channel MOSFET, 3 A, 50 V Enhancement, 8-Pin SOIC

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可享批量折扣

小計（1 卷，共 4000 件）*

TWD27,600.00

(不含稅)

TWD28,960.00

訂單超過 $1,300.00 免費送貨

有庫存

加上 4,000 件從 2026年1月05日起發貨

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單位	每單位	每卷*
4000 - 16000	TWD6.90	TWD27,600.00
20000 +	TWD6.70	TWD26,800.00

* 參考價格

RS庫存編號:: 168-8757
製造零件編號:: IRF7103TRPBF
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	3A
	Maximum Drain Source Voltage Vds	50V
	Package Type	SOIC
	Series	HEXFET
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	200mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	12nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	2W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Transistor Configuration	Isolated
	Height	1.5mm
	Standards/Approvals	No
	Width	4 mm
	Length	5mm
	Number of Elements per Chip	2
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 3A
	Maximum Drain Source Voltage Vds 50V
	Package Type SOIC
	Series HEXFET
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 200mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 12nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 2W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Transistor Configuration Isolated
	Height 1.5mm
	Standards/Approvals No
	Width 4 mm
	Length 5mm
	Number of Elements per Chip 2
	Automotive Standard No

Infineon HEXFET Series MOSFET, 3A Maximum Continuous Drain Current, 2W Maximum Power Dissipation - IRF7103TRPBF

This MOSFET is designed for efficient performance across various applications. Its Durable construction is particularly beneficial in circuits requiring effective power management, making it suitable for electrical and automation sectors. With a maximum drain-source voltage of 50V, it ensures reliable switching capabilities to meet application demands.

Features & Benefits

• Low Rds(on) of 200mΩ for improved efficiency

• Maximum continuous drain current of 3A enhances power handling

• Operational temperatures up to +150°C for increased reliability

• Wide gate threshold range of 1V to 3V for flexible control

• Dual isolated transistor configuration aids circuit integration

• Surface mount design simplifies PCB assembly and optimises space

Applications

• Used in power supply designs for energy-efficient operation

• Integrated into motor drive for efficient motor control

• Employed in switching power supplies for improved performance

• Suitable for automation systems needing dependable switching components

What is the recommended operating temperature range for this component?

The component operates efficiently within a temperature range of -55°C to +150°C, ensuring reliability in various environments.

How does one determine the suitable gate voltage for optimal performance?

The acceptable gate-source voltage varies from -20V to +20V, providing flexibility in control circuit designs. For best results, operating near 10V is recommended, as indicated by typical gate charge specifications.

What safety precautions should be taken when using this device?

It is important to not exceed the voltage and current ratings during operation to avoid potential failure or damage. Moreover, appropriate heatsinking may be necessary to maintain optimal operating temperatures under heavy loads.

Can it be used in circuits requiring fast switching?

Yes, this MOSFET is designed for fast switching capabilities, making it well-suited for applications requiring high-speed performance, such as PWM control in motor drivers.

Is this MOSFET compatible with standard PCB layouts?

The surface mount design complies with standard PCB layouts, facilitating integration into existing circuits with minimal adjustments for placement.