製造零件編號

Infineon HEXFET Type N-Channel MOSFET, 9 A, 40 V Enhancement, 8-Pin SO-8

RS庫存編號:: 217-2606
製造零件編號:: IRF7469TRPBF
製造商:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 9 A, 40 V Enhancement, 8-Pin SO-8

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 4000 件）*

TWD48,000.00

(不含稅)

TWD50,400.00

訂單超過 $1,300.00 免費送貨

有庫存

加上 4,000 件從 2026年1月05日起發貨

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單位	每單位	每卷*
4000 - 16000	TWD12.00	TWD48,000.00
20000 +	TWD11.60	TWD46,400.00

* 參考價格

RS庫存編號:: 217-2606
製造零件編號:: IRF7469TRPBF
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	9A
	Maximum Drain Source Voltage Vds	40V
	Package Type	SO-8
	Series	HEXFET
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	21mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	2.5W
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	39nC
	Maximum Operating Temperature	175°C
	Width	3.9 mm
	Length	4.9mm
	Standards/Approvals	No
	Height	1.75mm
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 9A
	Maximum Drain Source Voltage Vds 40V
	Package Type SO-8
	Series HEXFET
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 21mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 2.5W
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 39nC
	Maximum Operating Temperature 175°C
	Width 3.9 mm
	Length 4.9mm
	Standards/Approvals No
	Height 1.75mm
	Automotive Standard No

Datasheet - IRF7469TRPBF

The Infineon 40V Single N-Channel HEXFET Power MOSFET in a SO-8 package.

Ultra-Low Gate Impedance

Very Low RDS(on)

Fully Characterized Avalanche Voltage and Current

Infineon HEXFET Type N-Channel MOSFET, 9 A, 40 V Enhancement, 8-Pin SO-8

訂單超過 $1,300.00 免費送貨

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