Infineon HEXFET Type N-Channel MOSFET, 9 A, 40 V Enhancement, 8-Pin SO-8 IRF7469TRPBF
- RS庫存編號:
- 217-2607
- 製造零件編號:
- IRF7469TRPBF
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 20 件）*
TWD420.00
(不含稅)
TWD441.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 4,220 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 20 - 980 | TWD21.00 | TWD420.00 |
| 1000 - 1980 | TWD20.50 | TWD410.00 |
| 2000 + | TWD20.20 | TWD404.00 |
* 參考價格
- RS庫存編號:
- 217-2607
- 製造零件編號:
- IRF7469TRPBF
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | HEXFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 21mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 39nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 4.9mm | |
| Standards/Approvals | No | |
| Width | 3.9 mm | |
| Height | 1.75mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series HEXFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 21mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 39nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Length 4.9mm | ||
Standards/Approvals No | ||
Width 3.9 mm | ||
Height 1.75mm | ||
Automotive Standard No | ||
The Infineon 40V Single N-Channel HEXFET Power MOSFET in a SO-8 package.
Ultra-Low Gate Impedance
Very Low RDS(on)
Fully Characterized Avalanche Voltage and Current
相關連結
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 8-Pin SO-8
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 8-Pin SO-8
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 8-Pin SO-8 IRF7351TRPBF
- Infineon HEXFET Type N-Channel MOSFET 20 V, 8-Pin SO-8
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin SO-8
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 8-Pin SO-8
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin SO-8