Infineon HEXFET Type N-Channel MOSFET, 57 A, 100 V SO-8 IRF6644TRPBF
- RS庫存編號:
- 257-9296
- 製造零件編號:
- IRF6644TRPBF
- 製造商:
- Infineon
可享批量折扣
小計（1 包，共 2 件）*
TWD173.00
(不含稅)
TWD181.64
(含稅)
添加 16 件 件可免費送貨
有庫存
- 加上 4,470 件從 2026年2月23日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 48 | TWD86.50 | TWD173.00 |
| 50 - 98 | TWD82.00 | TWD164.00 |
| 100 - 498 | TWD77.00 | TWD154.00 |
| 500 - 1998 | TWD72.00 | TWD144.00 |
| 2000 + | TWD66.50 | TWD133.00 |
* 參考價格
- RS庫存編號:
- 257-9296
- 製造零件編號:
- IRF6644TRPBF
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 57A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SO-8 | |
| Series | HEXFET | |
| Maximum Drain Source Resistance Rds | 13mΩ | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Maximum Power Dissipation Pd | 89W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 57A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SO-8 | ||
Series HEXFET | ||
Maximum Drain Source Resistance Rds 13mΩ | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Maximum Power Dissipation Pd 89W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRF series is the strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
High current rating
Dual side cooling capability
Low package height of 0.7mm
Low parasitic (1 to 2 nH) inductance package
100 percent lead free (No RoHS exemption)
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