Infineon OptiMOS-T2 Type N-Channel Power MOSFET, 20 A, 40 V Enhancement, 8-Pin TDSON-8-4
- RS庫存編號:
- 273-2628
- 製造零件編號:
- BSC076N04NDATMA1
- 製造商:
- Infineon
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 包,共 5 件)*
TWD182.00
(不含稅)
TWD191.10
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 90 件從 2026年1月19日 起發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 45 | TWD36.40 | TWD182.00 |
| 50 - 495 | TWD33.00 | TWD165.00 |
| 500 - 995 | TWD32.40 | TWD162.00 |
| 1000 - 2495 | TWD31.80 | TWD159.00 |
| 2500 + | TWD31.20 | TWD156.00 |
* 參考價格
- RS庫存編號:
- 273-2628
- 製造零件編號:
- BSC076N04NDATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TDSON-8-4 | |
| Series | OptiMOS-T2 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 7.6mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 65W | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, IEC61249-2-21, DIN IEC 68-1: 55/175/56 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TDSON-8-4 | ||
Series OptiMOS-T2 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 7.6mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 65W | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, IEC61249-2-21, DIN IEC 68-1: 55/175/56 | ||
Automotive Standard No | ||
The Infineon Power MOSFET is a N channel 40 V power MOSFET. This MOSFET optimized for drives applications and it is 100 percent avalanche tested. It is qualified for industrial applications according to the relevant tests of JEDEC47 20 2.
Halogen free
RoHS compliant
Pb free lead plating
Fast switching MOSFETs
Superior thermal resistance
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