Infineon OptiMOS-T2 Type N-Channel Power MOSFET, 20 A, 40 V Enhancement, 8-Pin TDSON-8-4 BSC076N04NDATMA1

小計(1 卷,共 5000 件)*

TWD145,500.00

(不含稅)

TWD152,800.00

(含稅)

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  • 2026年6月22日 發貨
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RS庫存編號:
273-2627
製造零件編號:
BSC076N04NDATMA1
製造商:
Infineon
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品牌

Infineon

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

40V

Series

OptiMOS-T2

Package Type

TDSON-8-4

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

7.6mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

65W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

28nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS, IEC61249-2-21, DIN IEC 68-1: 55/175/56

Automotive Standard

No

The Infineon Power MOSFET is a N channel 40 V power MOSFET. This MOSFET optimized for drives applications and it is 100 percent avalanche tested. It is qualified for industrial applications according to the relevant tests of JEDEC47 20 2.

Halogen free

RoHS compliant

Pb free lead plating

Fast switching MOSFETs

Superior thermal resistance

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