Infineon Dual OptiMOS-T2 2 Type N-Channel Power Transistor, 16 A, 100 V Enhancement, 8-Pin TDSON IPG16N10S461AATMA1

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包裝方式:
RS庫存編號:
214-9058
製造零件編號:
IPG16N10S461AATMA1
製造商:
Infineon
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品牌

Infineon

Channel Type

Type N

Product Type

Power Transistor

Maximum Continuous Drain Current Id

16A

Maximum Drain Source Voltage Vds

100V

Series

OptiMOS-T2

Package Type

TDSON

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

61mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

5.4nC

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

29W

Minimum Operating Temperature

-55°C

Transistor Configuration

Dual

Maximum Operating Temperature

175°C

Height

1mm

Length

5.15mm

Standards/Approvals

RoHS

Width

5.9 mm

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

The Infineon range of new OptiMOS -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS -T2 product family extends the existing families of OptiMOS -T and OptiMOS. The Dual N-channel Normal Level - Enhancement mode, are feasible for automatic optical inspection (AOI). OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements.

The product is AEC Q101 qualified

100% Avalanche tested

It has 175°C operating temperature

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