Infineon Dual OptiMOS-T2 2 Type N-Channel Power Transistor, 20 A, 100 V Enhancement, 8-Pin TDSON IPG20N10S436AATMA1

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TWD388.50

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包裝方式:
RS庫存編號:
218-3060
製造零件編號:
IPG20N10S436AATMA1
製造商:
Infineon
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品牌

Infineon

Channel Type

Type N

Product Type

Power Transistor

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

100V

Package Type

TDSON

Series

OptiMOS-T2

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

36mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

9.4nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

43W

Forward Voltage Vf

1V

Transistor Configuration

Dual

Maximum Operating Temperature

175°C

Height

1mm

Length

5.15mm

Standards/Approvals

AEC Q101, RoHS

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

The Infineon OptiMOS™-T2 series dual N- channel automotive MOSFET. It is feasible for automatic optical inspection (AOI).

Dual N-channel - Enhancement mode

100% Avalanche tested

175°C operating temperature

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