Infineon Dual OptiMOS 2 Type N-Channel Power Transistor, 20 A, 55 V Enhancement, 8-Pin TDSON IPG20N06S2L65AATMA1
- RS庫存編號:
- 223-8520
- 製造零件編號:
- IPG20N06S2L65AATMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 15 件）*
TWD300.00
(不含稅)
TWD315.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 19,950 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 15 - 15 | TWD20.00 | TWD300.00 |
| 30 - 75 | TWD19.50 | TWD292.50 |
| 90 - 225 | TWD19.10 | TWD286.50 |
| 240 - 465 | TWD18.60 | TWD279.00 |
| 480 + | TWD18.00 | TWD270.00 |
* 參考價格
- RS庫存編號:
- 223-8520
- 製造零件編號:
- IPG20N06S2L65AATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | Power Transistor | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | OptiMOS | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 43W | |
| Typical Gate Charge Qg @ Vgs | 9.4nC | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 175°C | |
| Height | 1mm | |
| Standards/Approvals | RoHS | |
| Width | 5.9 mm | |
| Length | 5.15mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type Power Transistor | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series OptiMOS | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 43W | ||
Typical Gate Charge Qg @ Vgs 9.4nC | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 175°C | ||
Height 1mm | ||
Standards/Approvals RoHS | ||
Width 5.9 mm | ||
Length 5.15mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS series dual N-channel MOSFET has drain to source voltage of 55 V. It has benefits of larger source lead frame connection for wire bonding and bond wire is 200um for up to 20A current.
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package
Ultra low Rds
100% Avalanche tested
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