Infineon Dual OptiMOS 2 Type N-Channel Power Transistor, 20 A, 40 V Enhancement, 8-Pin TDSON IPG20N04S4L07AATMA1
- RS庫存編號:
- 220-7422
- 製造零件編號:
- IPG20N04S4L07AATMA1
- 製造商:
- Infineon
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可享批量折扣
小計（1 包，共 10 件）*
TWD427.00
(不含稅)
TWD448.40
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 4,960 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 1240 | TWD42.70 | TWD427.00 |
| 1250 - 2490 | TWD41.70 | TWD417.00 |
| 2500 + | TWD41.00 | TWD410.00 |
* 參考價格
- RS庫存編號:
- 220-7422
- 製造零件編號:
- IPG20N04S4L07AATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | Power Transistor | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | OptiMOS | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 7.2mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 39nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 65W | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Dual | |
| Width | 5.9 mm | |
| Height | 1mm | |
| Length | 5.15mm | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type Power Transistor | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series OptiMOS | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 7.2mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 39nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 65W | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Dual | ||
Width 5.9 mm | ||
Height 1mm | ||
Length 5.15mm | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The Infineon offers a wide range of 20V-40V N-channel automotive qualified power MOSFETs using the new OptiMOS technology in a variety of packages to meet a range of needs and achieving RDS(on) down to 0.6mΩ.The new OptiMOS 6 and Optimos5 40V benchmark MOSFET technology enables low conduction losses (best in Class RDSon performance), low switching losses (improved switching behaviour), improved diode recovery and EMC behaviour. This MOSFET technology is used in the most advanced and innovative packages in order to reach the best product performances and quality. For ultimate design flexibility, automotive-qualified MOSFETs are available in a variety of packages to meet a range of needs. Infineon offer customers a steady stream of improvements in current capability, switching behaviour, reliability, package size and overall quality. The newly developed integrated half-bridge is an innovative and cost efficient package solution for motor drive and body applications.
Dual N-channel Logic Level - Enhancement mode
MSL1 up to 260°C peak reflow
175°C operating temperature
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