Infineon Enhancement Mode OptiMOS-T2 2 Type N-Channel MOSFET, 20 A, 40 V Enhancement, 8-Pin TDSON IPG20N04S4L08AATMA1
- RS庫存編號:
- 214-9060
- 製造零件編號:
- IPG20N04S4L08AATMA1
- 製造商:
- Infineon
暫時無法供應
我們無法確定此產品何時有貨，RS 預計將其從我們的產品目錄中移除。
- RS庫存編號:
- 214-9060
- 製造零件編號:
- IPG20N04S4L08AATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TDSON | |
| Series | OptiMOS-T2 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 8.2mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 54W | |
| Maximum Gate Source Voltage Vgs | ±16 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 39nC | |
| Transistor Configuration | Enhancement Mode | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Length | 5.15mm | |
| Width | 5.9 mm | |
| Height | 1mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TDSON | ||
Series OptiMOS-T2 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 8.2mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 54W | ||
Maximum Gate Source Voltage Vgs ±16 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 39nC | ||
Transistor Configuration Enhancement Mode | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Length 5.15mm | ||
Width 5.9 mm | ||
Height 1mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The Infineon range of new OptiMOS -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS -T2 product family extends the existing families of OptiMOS -T and OptiMOS. The Dual N-channel Logic Level - Enhancement mode, are feasible for automatic optical inspection (AOI). OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements.
The product is AEC Q101 qualified
100% Avalanche tested
It has 175°C operating temperature
相關連結
- Infineon Enhancement Mode OptiMOS-T2 2 Type N-Channel MOSFET 40 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS-T2 Type N-Channel Power MOSFET 40 V Enhancement, 8-Pin TDSON-8-4
- Infineon OptiMOS-T2 Type N-Channel Power MOSFET 40 V Enhancement, 8-Pin TDSON-8-4 BSC076N04NDATMA1
- Infineon Dual N Channel Logic Level Enhancement Mode OptiMOS-T2 2 Type N-Channel MOSFET 60 V Enhancement, 8-Pin
- Infineon Dual OptiMOS-T2 2 Type N-Channel Power Transistor 100 V Enhancement, 8-Pin TDSON
- Infineon Dual OptiMOS-T2 2 Type N-Channel Power Transistor 100 V Enhancement, 8-Pin TDSON
- Infineon Dual OptiMOS-T2 2 Type N-Channel Power Transistor 100 V Enhancement, 8-Pin TDSON IPG20N10S436AATMA1
- Infineon Dual OptiMOS-T2 2 Type N-Channel Power Transistor 100 V Enhancement, 8-Pin TDSON IPG16N10S461AATMA1