製造零件編號

Infineon HEXFET Type N-Channel MOSFET, 210 A, 40 V Enhancement, 3-Pin TO-220 IRF2204PBF

RS庫存編號:: 262-6722
製造零件編號:: IRF2204PBF
製造商:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 210 A, 40 V Enhancement, 3-Pin TO-220 IRF2204PBF

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 包，共 5 件）*

TWD349.00

(不含稅)

TWD366.45

訂單超過 $1,300.00 免費送貨

暫時缺貨

1,025 件準備從其他地點送貨

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單位	每單位	每包*
5 - 45	TWD69.80	TWD349.00
50 - 95	TWD54.40	TWD272.00
100 - 245	TWD48.60	TWD243.00
250 - 495	TWD47.80	TWD239.00
500 +	TWD44.20	TWD221.00

* 參考價格

RS庫存編號:: 262-6722
製造零件編號:: IRF2204PBF
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	210A
	Maximum Drain Source Voltage Vds	40V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Channel Mode	Enhancement
	Forward Voltage Vf	1.3V
	Standards/Approvals	No
	Automotive Standard	No
	Distrelec Product Id	304-41-665

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 210A
	Maximum Drain Source Voltage Vds 40V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Channel Mode Enhancement
	Forward Voltage Vf 1.3V
	Standards/Approvals No
	Automotive Standard No
	Distrelec Product Id 304-41-665

Datasheet - IRF2204PBF

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. This design has additional features such as 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.

Ultra low on-resistance

Dynamic dv/dt rating

Repetitive avalanche allowed up to Tjmax

Infineon HEXFET Type N-Channel MOSFET, 210 A, 40 V Enhancement, 3-Pin TO-220 IRF2204PBF

訂單超過 $1,300.00 免費送貨

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