Infineon HEXFET Type N-Channel MOSFET, 210 A, 75 V Enhancement, 3-Pin TO-220 IRFB3077PBF

RS庫存編號:: 650-4716
Distrelec 貨號:: 303-41-316
製造零件編號:: IRFB3077PBF
製造商:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 210 A, 75 V Enhancement, 3-Pin TO-220 IRFB3077PBF

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 件）*

TWD87.00

(不含稅)

TWD91.35

訂單超過 $1,300.00 免費送貨

有庫存

126 件準備從其他地點送貨
加上 954 件從 2026年1月08日起發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位
1 - 12	TWD87.00
13 - 24	TWD85.00
25 +	TWD79.00

* 參考價格

RS庫存編號:: 650-4716
Distrelec 貨號:: 303-41-316
製造零件編號:: IRFB3077PBF
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	210A
	Maximum Drain Source Voltage Vds	75V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	3mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	160nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	370W
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Length	10.66mm
	Width	4.82 mm
	Standards/Approvals	No
	Height	9.02mm
	Distrelec Product Id	30341316
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 210A
	Maximum Drain Source Voltage Vds 75V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 3mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 160nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 370W
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Length 10.66mm
	Width 4.82 mm
	Standards/Approvals No
	Height 9.02mm
	Distrelec Product Id 30341316
	Automotive Standard No

登入下載 CAD 模型

Infineon HEXFET Series MOSFET, 210A Maximum Continuous Drain Current, 75V Maximum Drain Source Voltage - IRFB3077PBF

This MOSFET is a high-performance power electronics component suitable for various demanding applications. Designed using Si MOSFET technology, it features a TO-220AB MOSFET package that enables effective thermal management. With a maximum continuous drain current of 210A and a maximum drain-source voltage of 75V, it excels in high-current applications while ensuring reliable performance under tough conditions.

Features & Benefits

• Achieves low RDS(on) of 3.3mΩ for efficient operation

• Designed for enhancement mode, supporting robust applications

• High maximum power dissipation of 370W optimises device longevity

• Improved avalanche and dynamic dV/dt ruggedness ensures safety

• Fully characterised capacitance, enhancing switching performance

• Suitable for high-speed power switching with excellent thermal stability

Applications

• Utilised in high-efficiency synchronous rectification systems

• Ideal for uninterruptible power supply configurations

• Effective in hard switched and high-frequency circuits

• Facilitates efficient power management in industrial automation systems

• Supports various power supply designs in electrical and mechanical

What operating temperature range can this component endure?

It operates reliably within a temperature range of -55°C to +175°C, making it suitable for a wide variety of environments.

How does the low RDS(on) benefit the application?

The low RDS(on) significantly reduces power loss during operation, which enhances energy efficiency and thermal performance in applications requiring high current flow.

What are the advantages of the TO-220AB package format?

This package format ensures better heat dissipation and easier installation, particularly in through-hole mounting scenarios, promoting robust circuit designs.

What type of gate threshold voltage does it require?

The component supports a gate threshold voltage ranging between 2V and 4V, allowing for compatibility with various control circuits.