Infineon HEXFET Type N-Channel MOSFET, 210 A, 60 V Enhancement, 3-Pin TO-220

RS庫存編號:: 124-8962
製造零件編號:: IRFB3206PBF
製造商:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 210 A, 60 V Enhancement, 3-Pin TO-220

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可享批量折扣

小計（1 管，共 50 件）*

TWD1,950.00

(不含稅)

TWD2,047.50

訂單超過 $1,300.00 免費送貨

暫時缺貨

50 件準備從其他地點送貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每管*
50 - 50	TWD39.00	TWD1,950.00
100 +	TWD38.20	TWD1,910.00

* 參考價格

RS庫存編號:: 124-8962
製造零件編號:: IRFB3206PBF
製造商:: Infineon

規格

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	210A
	Maximum Drain Source Voltage Vds	60V
	Package Type	TO-220
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	3mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	300W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	-1.2V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	120nC
	Maximum Operating Temperature	175°C
	Height	9.02mm
	Width	4.83 mm
	Standards/Approvals	No
	Length	10.67mm
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 210A
	Maximum Drain Source Voltage Vds 60V
	Package Type TO-220
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 3mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 300W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf -1.2V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 120nC
	Maximum Operating Temperature 175°C
	Height 9.02mm
	Width 4.83 mm
	Standards/Approvals No
	Length 10.67mm
	Automotive Standard No

COO (Country of Origin):: CN

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