Infineon HEXFET N-Channel MOSFET, 210 A, 55 V Enhancement, 3-Pin TO-263 IRF3805STRLPBF

此圖片僅供參考,請參閲產品詳細資訊及規格

可享批量折扣
查看批量定價選項

小計(1 卷,共 800 件)*

TWD70,000.00

(不含稅)

TWD73,504.00

(含稅)

Add to Basket
選擇或輸入數量
庫存資訊目前無法存取 - 請稍後再回來查看

單位
每單位
每卷*
800 - 3200TWD87.50TWD70,000.00
4000 +TWD84.90TWD67,920.00

* 參考價格

RS庫存編號:
217-2597
製造零件編號:
IRF3805STRLPBF
製造商:
Infineon
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

210A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.3mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

190nC

Maximum Power Dissipation Pd

300W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Width

6.22mm

Length

6.5mm

Standards/Approvals

No

Height

2.3mm

Automotive Standard

No

The Infineon HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead free

相關連結