Infineon HEXFET Type N-Channel MOSFET, 210 A, 55 V Enhancement, 3-Pin TO-263 IRF3805STRLPBF
- RS庫存編號:
- 217-2598
- 製造零件編號:
- IRF3805STRLPBF
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD822.00
(不含稅)
TWD863.10
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 2,260 件從 2026年1月05日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 195 | TWD164.40 | TWD822.00 |
| 200 - 395 | TWD160.20 | TWD801.00 |
| 400 + | TWD150.20 | TWD751.00 |
* 參考價格
- RS庫存編號:
- 217-2598
- 製造零件編號:
- IRF3805STRLPBF
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 210A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.3mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 190nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 300W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 6.22 mm | |
| Height | 2.3mm | |
| Length | 6.5mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 210A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.3mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 190nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 300W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 6.22 mm | ||
Height 2.3mm | ||
Length 6.5mm | ||
Automotive Standard No | ||
The Infineon HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead free
相關連結
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263