Infineon IPT Type N-Channel MOSFET, 199 A, 80 V HSOF IPT012N08NF2SATMA1
- RS庫存編號:
- 259-2643
- 製造零件編號:
- IPT012N08NF2SATMA1
- 製造商:
- Infineon
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TWD167.00
(不含稅)
TWD175.35
(含稅)
訂單超過 $1,300.00 免費送貨
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* 參考價格
- RS庫存編號:
- 259-2643
- 製造零件編號:
- IPT012N08NF2SATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 199A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | HSOF | |
| Series | IPT | |
| Mount Type | Surface | |
| Forward Voltage Vf | 1.2V | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 199A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type HSOF | ||
Series IPT | ||
Mount Type Surface | ||
Forward Voltage Vf 1.2V | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon StrongIRFET 2 power MOSFETs are optimized for a broad range of applications like SMPS, motor drive, battery powered, battery management, UPS, and light electric vehicles. This new technology offers up to 40 percent RDS(on) improvement and up to 60 percent lower Qg compared to the previous StrongIRFET devices, translating into higher power efficiency for improved overall system performance. Increased current ratings allow for higher current carrying capability, eliminating the need to parallel multiple devices translating to lower BOM costs and board savings.
Broad availability from distribution partners
Excellent price/performance ratio
Ideal for high and low switching frequencies
Industry standard footprint through-hole package
High current rating
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