Infineon IPT Type N-Channel MOSFET, 331 A, 80 V Enhancement, 8-Pin PG-HSOF-8 IPT014N08NM5ATMA1

此圖片僅供參考,請參閲產品詳細資訊及規格

可享批量折扣

小計(1 件)*

TWD440.00

(不含稅)

TWD462.00

(含稅)

Add to Basket
選擇或輸入數量
有庫存
  • 100 件準備從其他地點送貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位
每單位
1 - 49TWD440.00
50 - 99TWD431.00
100 - 249TWD422.00
250 - 999TWD414.00
1000 +TWD408.00

* 參考價格

RS庫存編號:
273-2792
製造零件編號:
IPT014N08NM5ATMA1
製造商:
Infineon
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

331A

Maximum Drain Source Voltage Vds

80V

Package Type

PG-HSOF-8

Series

IPT

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.4mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

160nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

300W

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

10 V

Maximum Operating Temperature

175°C

Standards/Approvals

IEC61249-2-21, RoHS, JEDEC

Automotive Standard

No

COO (Country of Origin):
MY
The Infineon MOSFET is a N channel 80 V MOSFET and optimized for battery powered applications. It is qualified according to JEDEC for target applications. This MOSFET is fully qualified according to JEDEC for industrial applications and halogen free according to IEC61249 2 21.

RoHS compliant

Pb free lead plating

Excellent gate charge

Very low on resistance

100 percent avalanche tested

相關連結