Infineon IPT Type N-Channel MOSFET, 8 A, 600 V Enhancement, 8-Pin PG-HSOF-8 IPT60T065S7XTMA1
- RS庫存編號:
- 349-262
- 製造零件編號:
- IPT60T065S7XTMA1
- 製造商:
- Infineon
可享批量折扣
小計（1 包，共 2 件）*
TWD416.00
(不含稅)
TWD436.80
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 2,000 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 18 | TWD208.00 | TWD416.00 |
| 20 - 198 | TWD187.00 | TWD374.00 |
| 200 - 998 | TWD172.50 | TWD345.00 |
| 1000 - 1998 | TWD160.00 | TWD320.00 |
| 2000 + | TWD143.50 | TWD287.00 |
* 參考價格
- RS庫存編號:
- 349-262
- 製造零件編號:
- IPT60T065S7XTMA1
- 製造商:
- Infineon
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IPT | |
| Package Type | PG-HSOF-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 51nC | |
| Maximum Power Dissipation Pd | 167W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.82V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC for Industrial Applications | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IPT | ||
Package Type PG-HSOF-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 51nC | ||
Maximum Power Dissipation Pd 167W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.82V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC for Industrial Applications | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon CoolMOS S7 boasts the lowest Rdson values for an HV SJ MOSFET, with a distinctive increase in energy efficiency. The embedded Temperature sensor increases junction temperature sensing accuracy and robustness while keeping an easy and seamless implementation. CoolMOS S7 is optimized for static switching and high current applications. It is an ideal fit for solid-state relay, circuit breaker designs, and line rectification in SMPS and inverter topologies. The new temperature sensor enhances S7 features, allowing the best possible utilization of the power transistor.
CoolMOS S7 technology enables lowest RDS(on) in the smallest footprint
Optimized price performance in low frequency switching applications
High pulse current capability
Seamless diagnostics at the lowest system
Temperature sense feature for protection and optimized thermal device utilization
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