Infineon IPT Type N-Channel MOSFET, 169 A, 80 V Enhancement, 8-Pin PG-HSOF-8
- RS庫存編號:
- 273-2794
- 製造零件編號:
- IPT029N08N5ATMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 2 件）*
TWD193.00
(不含稅)
TWD202.64
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 82 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 48 | TWD96.50 | TWD193.00 |
| 50 - 98 | TWD87.50 | TWD175.00 |
| 100 - 248 | TWD80.50 | TWD161.00 |
| 250 - 998 | TWD74.00 | TWD148.00 |
| 1000 + | TWD69.00 | TWD138.00 |
* 參考價格
- RS庫存編號:
- 273-2794
- 製造零件編號:
- IPT029N08N5ATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 169A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PG-HSOF-8 | |
| Series | IPT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.9mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 167W | |
| Typical Gate Charge Qg @ Vgs | 7nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, JEDEC1, IEC61249-2-21 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 169A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PG-HSOF-8 | ||
Series IPT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.9mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 167W | ||
Typical Gate Charge Qg @ Vgs 7nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, JEDEC1, IEC61249-2-21 | ||
Automotive Standard No | ||
The Infineon MOSFET is a N channel 80 V MOSFET and ideal for high frequency switching and synchronized rectification. It is qualified according to JEDEC for target applications. This MOSFET is fully qualified according to JEDEC for industrial applications and halogen free according to IEC61249 2 21.
RoHS compliant
Pb free lead plating
Excellent gate charge
Very low on resistance
100 percent avalanche tested
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