Infineon IPT N-Channel MOSFET, 333 A, 80 V, 8-Pin HSOF-8 IPT013N08NM5LFATMA1
- RS庫存編號:
- 236-1586
- 製造零件編號:
- IPT013N08NM5LFATMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 卷，共 2000 件）*
TWD338,800.00
(不含稅)
TWD355,740.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年1月13日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 2000 - 8000 | TWD169.40 | TWD338,800.00 |
| 10000 + | TWD164.30 | TWD328,600.00 |
* 參考價格
- RS庫存編號:
- 236-1586
- 製造零件編號:
- IPT013N08NM5LFATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 333A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | IPT | |
| Package Type | HSOF-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.3mΩ | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 158nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 278W | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.1mm | |
| Height | 2.4mm | |
| Width | 10.58mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 333A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series IPT | ||
Package Type HSOF-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.3mΩ | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 158nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 278W | ||
Maximum Operating Temperature 150°C | ||
Length 10.1mm | ||
Height 2.4mm | ||
Width 10.58mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon IPT Series MOSFET, 80V Maximum Drain Source Voltage, 333A Maximum Continuous Drain Current - IPT013N08NM5LFATMA1
This MOSFET is a high-current N-channel transistor designed for surface-mount power switching in demanding thermal environments. It operates across a wide ambient range and delivers substantial continuous drain current and voltage capability for industrial and power-conversion applications.
Features and Benefits:
• 333A continuous drain current for heavy load handling
• 80V drain-to-source rating for mid-voltage systems
• 1.3mΩ low Rds(on) to reduce conduction losses
• 278W maximum power dissipation for thermal headroom
• 158nC typical gate charge for predictable switching behaviour
• 80V drain-to-source rating for mid-voltage systems
• 1.3mΩ low Rds(on) to reduce conduction losses
• 278W maximum power dissipation for thermal headroom
• 158nC typical gate charge for predictable switching behaviour
Applications
• Suitable for high-current DC-DC converters
• Ideal for motor drives and traction inverters
• Used with power distribution modules in servers
• Can be used for high-power battery management systems
• Ideal for motor drives and traction inverters
• Used with power distribution modules in servers
• Can be used for high-power battery management systems
What gate voltage range is permissible for driving this device?
The gate can be driven up to 20V relative to source without exceeding the specified limit.
What package and mounting style does it use for assembly?
It is supplied in an HSOF-8 package configured for surface mounting on printed-circuit assemblies.
How does the device perform in low-temperature conditions?
It is rated to operate down to -55°C, allowing use in cold-climate installations.
What are the physical envelope measurements relevant for PCB footprint planning?
The component measures 10.1mm by 10.58mm with a height of 2.4mm.
Is this device specified to meet automotive-grade standards?
It is not classified as an automotive-grade component.
相關連結
- Infineon IPT Type N-Channel MOSFET 80 V, 8-Pin HSOF-8 IPT013N08NM5LFATMA1
- Infineon IPT Type N-Channel MOSFET 80 V Enhancement, 8-Pin PG-HSOF-8
- Infineon IPT Type N-Channel MOSFET 80 V Enhancement, 8-Pin PG-HSOF-8 IPT029N08N5ATMA1
- Infineon IPT Type N-Channel MOSFET 80 V Enhancement, 8-Pin PG-HSOF-8 IPT014N08NM5ATMA1
- Infineon IPT Type N-Channel MOSFET 80 V HSOF
- Infineon IPT Type N-Channel MOSFET 80 V HSOF
- Infineon IPT Type N-Channel MOSFET 80 V HSOF IPT019N08N5ATMA1
- Infineon IPT Type N-Channel MOSFET 80 V HSOF IPT012N08NF2SATMA1