Infineon IPT Type N-Channel MOSFET, 333 A, 80 V, 8-Pin HSOF-8 IPT013N08NM5LFATMA1
- RS庫存編號:
- 236-1586
- 製造零件編號:
- IPT013N08NM5LFATMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 2000 件）*
TWD214,800.00
(不含稅)
TWD225,540.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年5月22日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 2000 - 8000 | TWD107.40 | TWD214,800.00 |
| 10000 + | TWD104.20 | TWD208,400.00 |
* 參考價格
- RS庫存編號:
- 236-1586
- 製造零件編號:
- IPT013N08NM5LFATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 333A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | HSOF-8 | |
| Series | IPT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.3mΩ | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 158nC | |
| Maximum Power Dissipation Pd | 278W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 10.1mm | |
| Width | 10.58 mm | |
| Height | 2.4mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 333A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type HSOF-8 | ||
Series IPT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.3mΩ | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 158nC | ||
Maximum Power Dissipation Pd 278W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 10.1mm | ||
Width 10.58 mm | ||
Height 2.4mm | ||
Automotive Standard No | ||
The Infineon OptiMOS 5 Linear FET, 80 V MOSFET . This product is fully qualified according to JEDEC for industrial applications .
Ideal for hot-swap and e-fuse applications
Very low on-resistance RDS(on)
Wide safe operating area SOA
N-channel, normal level
100% avalanche tested
Pb-free plating, halogen-free
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