製造零件編號

Infineon IPT Type N-Channel MOSFET, 247 A, 80 V HSOF IPT019N08N5ATMA1

RS庫存編號:: 258-3903
製造零件編號:: IPT019N08N5ATMA1
製造商:: Infineon

Infineon IPT Type N-Channel MOSFET, 247 A, 80 V HSOF IPT019N08N5ATMA1

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小計（1 件）*

TWD152.00

(不含稅)

TWD159.60

訂單超過 $1,300.00 免費送貨

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單位	每單位
1 - 9	TWD152.00
10 - 99	TWD132.00
100 - 249	TWD112.00
250 - 499	TWD110.00
500 +	TWD96.00

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RS庫存編號:: 258-3903
製造零件編號:: IPT019N08N5ATMA1
製造商:: Infineon

規格

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	247A
	Maximum Drain Source Voltage Vds	80V
	Package Type	HSOF
	Series	IPT
	Mount Type	Surface
	Maximum Drain Source Resistance Rds	2.9mΩ
	Forward Voltage Vf	1.2V
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 247A
	Maximum Drain Source Voltage Vds 80V
	Package Type HSOF
	Series IPT
	Mount Type Surface
	Maximum Drain Source Resistance Rds 2.9mΩ
	Forward Voltage Vf 1.2V
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPT019N08N5ATMA1

The Infineon OptiMOS 5 80V n-channel power MOSFET in TO-Leadless package is ideally suited for high switching frequencies. This package is especially designed for high current applications such as forklift, light electric vehicles, POL and telecom. With a 60% space reduction compared to D2PAK 7pin package, TO-leadless is the perfect solution where highest efficiency, outstanding EMI behaviour as well as best thermal behaviour and space reduction are required.

Optimized for synchronous rectification

Ideal for high switching frequency

Less paralleling required

Increased power density

Infineon IPT Type N-Channel MOSFET, 247 A, 80 V HSOF IPT019N08N5ATMA1

訂單超過 $1,300.00 免費送貨

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