Infineon HEXFET Type N-Channel MOSFET, 483 A, 100 V Enhancement TO-247 IRF100P218AKMA1
- RS庫存編號:
- 258-3951
- 製造零件編號:
- IRF100P218AKMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 件）*
TWD332.00
(不含稅)
TWD348.60
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 400 件從 2026年12月03日 起裝運發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 1 - 1 | TWD332.00 |
| 2 - 4 | TWD298.00 |
| 5 - 9 | TWD247.00 |
| 10 - 14 | TWD216.00 |
| 15 + | TWD204.00 |
* 參考價格
- RS庫存編號:
- 258-3951
- 製造零件編號:
- IRF100P218AKMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 483A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HEXFET | |
| Package Type | TO-247 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 1.28mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | +175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 483A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HEXFET | ||
Package Type TO-247 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 1.28mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature +175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 100V Maximum Drain‑Source Voltage, 483A Maximum Continuous Drain Current - IRF100P218AKMA1
This MOSFET is a high‑current N‑channel semiconductor device intended for power switching and conversion tasks. It operates across a wide temperature range suitable for demanding environments and is supplied in a TO‑247 package for surface mounting. The device uses enhancement‑mode conduction and meets RoHS requirements.
Features and Benefits:
• 1.28mΩ Rds(on) reduces conduction losses under heavy load
• 100V Vds enables medium‑voltage power applications
• 483A continuous current supports high‑current switching
• -55°C to +175°C range permits industrial temperature operation
• 1.2V forward voltage improves diode conduction efficiency
• 100V Vds enables medium‑voltage power applications
• 483A continuous current supports high‑current switching
• -55°C to +175°C range permits industrial temperature operation
• 1.2V forward voltage improves diode conduction efficiency
Applications
• Suitable for motor drive power stages
• Ideal for inverter output switching
• Used with high‑current power supply designs
• Can be used for DC-DC converters in industrial systems
• Suitable for high‑current test benches and load banks
• Ideal for inverter output switching
• Used with high‑current power supply designs
• Can be used for DC-DC converters in industrial systems
• Suitable for high‑current test benches and load banks
What mounting arrangement does it use?
It is supplied in a TO‑247 package designed for surface mounting.
Which conduction type does the device employ?
The transistor is an enhancement‑mode N‑type channel for controlled switching.
Is it compliant with common hazardous‑substance restrictions?
It carries RoHS approval indicating restricted substances are controlled.
What thermal extremes can it tolerate during operation?
The device is specified to function between -55°C and +175°C.
What is the typical forward voltage during body‑diode conduction?
The forward voltage is specified as 1.2V.
相關連結
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement TO-247 IRF100P218AKMA1
- Infineon StrongIRFET N-Channel MOSFET 100 V Enhancement, 3-Pin TO-247 IRF100P218XKMA1
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement TO-247 IRF150P221AKMA1
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement TO-247 IRF150P220AKMA1
- Infineon HEXFET N-Channel MOSFET 40 V Enhancement, 3-Pin TO-247
- Infineon HEXFET N-Channel MOSFET 200 V Enhancement, 3-Pin TO-247
- Infineon HEXFET N-Channel MOSFET 200 V Enhancement, 3-Pin TO-247
- Infineon HEXFET N-Channel MOSFET 55 V Enhancement, 3-Pin TO-247